Dependence of boron incorporation in delta layers on CVD diamond growth process and misorientation angle

Diamond is a promising material for the next generation of high-power and high-frequency semiconductor devices. In terms of its physical properties: high carrier saturation velocity (2.7·10 cm/s), high electron and hole mobility at low doping level, and record thermal conductivity, diamond significantly exceeds other semiconductor materials. Diamond is a wide-band gap semiconductor/insulator (band gap of about 5.5 eV), and partly because of this, all known dopants create the deep-lying levels with high activation energy. At room temperature only a very small fraction of the dopants are ionized. To create an acceptable level of conductivity, it is necessary to increase the level of doping, which inevitably leads to a decrease of the carrier mobility in diamond. To solve the problem of diamond doping the delta-layer technology is being developed. A nanometer thin layer of highly boron-doped diamond (the thickness of a few nanometers, NB> 10 cm) is introduced in the undoped highquality defect-free diamond. The achievement of high carrier mobility in this region requires the realization of sharp boundaries between doped and undoped material. This has been a rather difficult experimental problem. In this paper, we present the results of investigation of the boron incorporation into diamond delta doped layers as a function of the growth conditions and misorientation angle.